Product Summary

The K4E641612D-TL50 is a 4,194,304 × 16 bit Extended Data Out Mode CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of the K4E641612D-TL50. The K4E641612D-TL50 has CAS -before- RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability.

Parametrics

K4E641612D-TL50 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN, VOUT: -0.5 to +4.6 V; (2)Voltage on VCC supply relative to VSS VCC: -0.5 to +4.6 V; (3)Storage Temperature Tstg: -55 to +150℃; (4)Power Dissipation PD: 1 W; (5)Short Circuit Output Current IOS Address: 50 mA.

Features

K4E641612D-TL50 features: (1)Extended Data Out Mode operation; (2)2 CAS Byte/Word Read/Write operation; (3)CAS -before- RAS refresh capability; (4)RAS -only and Hidden refresh capability; (5)Fast parallel test mode capability; (6)Self-refresh capability (L-ver only); (7)LVTTL(3.3V) compatible inputs and outputs; (8)Early Write or output enable controlled write; (9)JEDEC Standard pinout; (10)Available in Plastic TSOP(II) packages; (11)+3.3V ±0.3V power supply; (12)Industrial Temperature operating ( -40~85℃).

Diagrams

K4E641612D-TL50 block diagram

K4E640411D
K4E640411D

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K4E640412D
K4E640412D

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K4E640412E
K4E640412E

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K4E640812B
K4E640812B

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K4E640812C
K4E640812C

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K4E640812E
K4E640812E

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