(China (Mainland))
Product Summary
The GM76C256CLLFW70 is a high-speed, low power and 32,786 ×8-bits CMOS Static Random Access Memory fabricated using Hynix’s high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device GM76C256CLLFW70 has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
Parametrics
GM76C256CLLFW70 absolute maximum ratings: (1)Vcc, VIN, VOUT Power Supply, Input/Output Voltage: -0.3 to 7.0 V; (2)TA Operating Temperature: 0 to 70℃; (3)TSTG Storage Temperature: -65 to 150℃; (4)PD Power Dissipation: 1.0 W; (5)IOUT Data Output Current: 50 mA.
Features
GM76C256CLLFW70 features: (1)Fully static operation and Tri-state output; (2)TTL compatible inputs and outputs; (3)Low power consumption; (4)Battery backup(L/LL-part): 2.0V(min.) data retention.
Diagrams
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