Product Summary

The 20n60a4d is a 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode. It combines the best features of MOSFETs and bipolar transistors. The 20n60a4d has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃.

Parametrics

20n60a4d absolute maximum ratings: (1)Collector to Emitter Voltage,BVCES: 600 V; (2)Collector Current Continuous At TC = 25℃, IC25: 70 A; At TC = 110℃, IC110: 40 A; (3)Collector Current Pulsed, ICM: 280 A; (4)Gate to Emitter Voltage Continuous, VGES: ±20 V; (5)Gate to Emitter Voltage Pulsed, VGEM: ±30 V; (6)Switching Safe Operating Area at TJ = 150℃, SSOA: 100A at 600V; (7)Power Dissipation Total at TC = 25℃, PD: 290 W; (8)Power Dissipation Derating TC > 25℃: 2.32 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to 150℃; (10)Maximum Lead Temperature for Soldering, TL: 260℃.

Features

20n60a4d features: (1)>100kHz Operation At 390V, 20A; (2)200kHz Operation At 390V, 12A; (3)600V Switching SOA Capability; (4)Typical Fall Time: 55ns at TJ = 125℃; (5)Low Conduction Loss; (6)Temperature Compensating SABER Model.

Diagrams

20n60a4d symbol

20N60BD1
20N60BD1
Other

Data Sheet
Negotiable