(China (Mainland))
Product Summary
The k9f2808uob is a 16M(16,777,216)×8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The k9f2808uob is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can take advantage of the k9f2808uob’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The k9f2808uob is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption.
Parametrics
k9f2808uob absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN/OUT: -0.6 to + 4.6 V; VCC: -0.6 to + 4.6 V; VCCQ: -0.6 to + 4.6 V; (2)Temperature Under Bias, TBIAS: -10 to + 125℃; (3)Storage Temperature, TSTG: -65 to + 150℃.
Features
k9f2808uob features: (1)Voltage Supply: 2.7 ~ 3.6 V; (2)Organization, Memory Cell Array : (16M + 512K)bit × 8bit; Data Register: (512 + 16)bit ×8bit; (3)Automatic Program and Erase, Page Program : (512 + 16)Byte; Block Erase : (16K + 512)Byte; (4)528-Byte Page Read Operation; (5)Fast Write Cycle Time; (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection; (8)Reliable CMOS Floating-Gate Technology; (9)Command Register Operation.
Diagrams
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 K9F2808UOB-YCBO |
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K9F2808Q0B-D |
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K9F2808Q0C-DCB0 |
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K9F2808U0A-YCB0 |
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Negotiable |
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K9F2808U0A-YIB0 |
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Negotiable |
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K9F2808U0B-D |
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Negotiable |
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K9F2808U0B-V |
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Negotiable |
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